AM9435P analog power preliminary publication order number: ds-am9435_g 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) m( ) i d (a) 49 @ v gs = -10v -5.7 75 @ v gs = -4.5v -5.0 product summary -30 p-channel 30-v (d-s) mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 12 3 4 5 6 7 8 symbol maximum units v ds -30 v gs 20 t a =25 o c 6.5 t a =70 o c 5.2 i dm 30 i s -1.6 a t a =25 o c 3.1 t a =70 o c 2.0 t j , t stg -55 to 150 o c drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame ter pulsed drain current b v gate-source voltage symbol maximum units maximum junction-to-case a t <= 5 sec r jc 25 o c/w maximum junction-to-ambient a t <= 10 sec r ja 40 o c/w parameter
AM9435P analog power preliminary publication order number: ds-am9435_g 2 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without fu rther notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically dis claims any and all liability, including without lim itation special, consequential or incidental damages. ?typical? parameters which may be provide d in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situ ation where personal injury or death may occur. should buyer purchase or use apl products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -1 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -5 on-state drain current a i d(on) v ds = -5 v, v gs = -10 v -30 a v gs = -10 v, i d = -5.7 a 49 v gs = -4.5 v, i d = -5.0 a 75 forward tranconductance a g fs v ds = -15 v, i d = -5.7 a 19 s diode forward voltage v sd i s = -2.1 a, v gs = 0 v -0.7 v total gate charge q g 6.4 gate-source charge q gs 1.9 gate-drain charge q gd 2.5 turn-on delay time t d(on) 10 rise time t r 2.8 turn-off delay time t d(off) 53.6 fall-time t f 46 parameter limits unit v dd = -15 v, r l = 15 , i d = -1 a, v gen = -10 v, r g = 6 ns v ds = -15 v, v gs = -4.5 v, i d = -5.7 a nc r ds(on) m dynamic b switching specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol drain-source on-resistance a
AM9435P analog power preliminary publication order number: ds-am9435_g 3 0 10 20 30 0 1 2 3 4 5 6 -vds, drain to source voltage (v) -id, drain current (a) vgs = -10v -3.0v -4.0v -5.0v v -6.0v v 0 3 6 9 12 15 1 1.5 2 2.5 3 3.5 4 4.5 -vgs, gate to source voltage (v) -id, drain current (a) ta = -55 o c 25 o c 125 o c vds = -5v 0.8 1 1.2 1.4 1.6 1.8 2 0 6 12 18 24 30 -id, drain current (a) rds(on), normalized drain-source on-resistance -4.5v -6.0v -10v 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 -vds, drain to source voltage (v) capacitance (pf) ciss coss crss f = 1 mhz vgs = 0 v 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 tj juncation temperature (c) normalized rds(on) vgs = 10v id = 5.7a typical electrical characteristics (p-channel) figure 1. on-region characteristics figure 2. body diode forward voltage variation with source current and temperature figure 3. on resistance vs vgs voltage figure 4. capacitance characteristics figure 5. gate charge characteristics figure 6. on-resistance variation with temperature -10 -8 -6 -4 -2 0 0 3 6 9 12 15 qg gate charge (nc) vgs gate to source voltage ( v ) i d =5.7
AM9435P analog power preliminary publication order number: ds-am9435_g 4 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -vsd, body diode forward voltage (v) -is, reverse drain current (a) vgs =0v ta = 125 o c 25 o c 0 0.05 0.1 0.15 0.2 0.25 2 4 6 8 10 -vgs, gate to source voltage (v) rds(on), on-resistance (ohm) id = -5.7a ta = 25 o c 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature (oc) -vth, gate-source thresthold voltage (v) vds = vgs id = -250ma 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, time (sec) p(pk), peak transient power (w) single pulse rqja = 125c/w ta = 25c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, t ime (sec) r q j a(t ) = r(t ) + rq j a r qj a = 125o c/ w tj - ta = p * r qj a(t ) dut y cycle, d = t 1 / t 2 p(p t t single pulse 0 .0 1 0 .0 2 0 .0 5 0 .2 d = 0 .5 typical electrical characteristics (p-channel) figure 7. transfer characteristics figure 8. on-resi stance with gate to source voltage figure 9. vth gate to source voltage vs temperature figure 10. single pulse maximum power dissipation normalized thermal transient junction to ambient figure 11. transient thermal response curve
AM9435P analog power preliminary publication order number: ds-am9435_g 5 package information so-8: 8lead h x 45
|
